BYV32G-200 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 01 — 11 January 2011 2 of 11
NXP Semiconductors
BYV32G-200
Dual ultrafast power diode
2. Pinning information
3. Ordering information
Dynamic characteristics
trr
reverse recovery time IF
=1A; VR
=30V;
dIF/dt = 100 A/μs; Tj
=25°C;
ramp recovery; see Figure 5
- 2025ns
IR
=1A; IF
=0.5A;
Tj
= 25 °C; step recovery;
measured at reverse current
= 0.25 A; see Figure 6
- 1020ns
Table 1. Quick reference data
…continued
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 2. Pinning information
Pin
Symbol
Description
Simplified outline
Graphic symbol
1 A1 anode 1
SOT226A (I2PAK)
2 K cathode
3 A2 anode 2
mb K mounting base; connected to cathode
1
23
sym125
A2
A1
K
Table 3. Ordering information
Type number
Package
Name
Description
Version
BYV32G-200 I2PAK plastic single-ended package (I2PAK); TO-262 SOT226A
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